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Properties in Ultrasmall Silicon Carbide Nanoparticles -

optical properties of ultrasmall silicon carbide (SiC) nanoparticles (NPWe deduce the radiative lifetimes of SiC NPs that are well supported

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The use of a germanium carbide (GeC), or a germanium silicon carbide (GeSiC) layer as a floating gate material to replace heavily doped polysilicon (

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silicon carbide Schottky barrier diodes over a large temperature and times the thermal voltage (kT/q) above the Fermi level is negligible

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of Point Defect Clusters in Ion-Irradiated Silicon Carbide

Abstract: Silicon Carbide (SiC) is a promising cladding material for accident-tolerant fuel in light water reactors due to its excellent resistance to

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR

A silicon carbide semiconductor device includes: an n-type drift layer 2 provided within an SiC layer b30;/b a plurality of p-type well regions

Lattice thermal conductivity in cubic silicon carbide

The lattice thermal conductivity of cubic silicon carbide is evaluated by means of a microscopic model considering the discrete nature of the

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Incorporation of Iron Nanoparticles into Silicon Carbide

In the present work, antimicrobial activity of zero valent iron supported on silicon carbide nanoparticles for the first time investigated. Thermal

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